Microwave Frequency Tripler using InGaAs HEMT Transistor
نویسندگان
چکیده
منابع مشابه
RF and Microwave Oscillator Design using p-HEMT Transistor
This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are des...
متن کاملInGaAs/GaAs HEMT for High Frequency Applications
In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...
متن کاملGraphene-based frequency tripler.
Graphene has captured the imagination of researchers worldwide as an ideal two-dimensional material with exceptional electrical transport properties. The high electron and hole mobility quickly inspired scientists to search for electronic applications that require high-performance channel materials. However, the absence of a bandgap in graphene immediately revealed itself in terms of ambipolar ...
متن کاملSimulation and Optimization of δ-doped AlInAs/InGaAs HEMT for High Frequency Applications
Simulation and Optimization of δ-doped AlInAs/InGaAs HEMT for High Frequency Applications Farhan Aziz, M.J. Siddiqui Department of Electronics and Communication Engg. BSACET, Mathura, U.P., India Department of Electronics Engg. Zakir Husain College of Engg. and Technology Aligarh Muslim University, Aligarh, U.P., India ____________________________________________________________________________...
متن کاملThe simulation of high-performance InGaP/InGaAs/GaAs pseudomorphic HEMT
Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Procedia Manufacturing
سال: 2020
ISSN: 2351-9789
DOI: 10.1016/j.promfg.2020.04.010